| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology which allows a high-purity amorphous gate oxide film to be formed by CVD. SOLUTION: A film-forming material for forming a gate oxide film by decomposing a compound that becomes a source of one or more elements selected from the group consisting of Zr, Hf, and Ln, a compound that becomes a source of Si, and an oxidant that becomes a source of O by means of a method selected from the group consisting of heat, plasma, light, and laser. As a source of Si in the gate oxide film, Si(NCO)<SB>4</SB>that is dissolved in a solvent is used. COPYRIGHT: (C)2007,JPO&INPIT
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