发明名称 ON-DIE TERMINATION DEVICE AND METHOD FOR SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide an on-die termination device and a method for a semiconductor memory that can prevent code adjustment errors. SOLUTION: The on-die termination device for semiconductor memory includes an ODT (On Die Termination) input driving means that divides an input voltage on the basis of a resistance ratio according to a first code consisting of at least two bits and outputs a first line voltage, a first ODT control means that counts the first code or resets the first code to a first set value according to whether or not the first line voltage matches a reference voltage, an ODT output driving means that divides an input voltage on the basis of the resistance ratio according to the first code and a second code consisting of at least two bits and outputs a second line voltage, and a second ODT control means that counts the second code or resets the second code to a second set value according to whether or not the second line voltage matches the reference voltage. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007179725(A) 申请公布日期 2007.07.12
申请号 JP20060348188 申请日期 2006.12.25
申请人 HYNIX SEMICONDUCTOR INC 发明人 PARK JEONG-HOON;YANG SUN-SUK
分类号 G11C11/4093;H03K19/0175 主分类号 G11C11/4093
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