PROCESS FOR MANUFACTURING A PHASE CHANGE SELECTION DEVICE WITH REDUCED CURRENT LEAKAGE, AND PHASE CHANGE SELECTION DEVICE, IN PARTICULAR FOR PHASE CHANGE MEMORY DEVICES

摘要

In a phase change memory including an ovonic threshold switch, conduction around the phase change material layer in the ovonic threshold switch is reduced. In one embodiment, the reduction is achieved by undercutting the conductive layers on either side of the phase change material layer. In another embodiment, an angled ion implantation is carried out which damages the edge regions of the conductive layers that sandwich the phase change material layer.