| 摘要 |
<p>The present invention relates to a gallium nitride-based compound semiconductor. The present invention provides a gallium nitride -based compound semiconductor comprising a substrate, a buffer layer containing boron and formed on the substrate, and a gallium nitride- based semiconductor layer formed on the buffer layer. The present invention further provides a method of fabricating the gallium nitride-based compound semiconductor. According to the present invention, the buffer layer containing boron is formed as a single film, a multi-layered film or a superlattice layer, thereby reducing crystal defects with respect to the semiconductor layer formed on the buffer layer and improving the crystallinity of the semiconductor layer, resulting in a semiconductor layer without crystal defects. Thus, it is possible to improve the performance and reliability of a device.</p> |
