| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photomask blank that can decrease a loading phenomenon by improving a dry etching rate of a light shielding film and that provides favorable pattern accuracy even in a fine pattern. <P>SOLUTION: The photomask blank for a dry etching process adapts to a method for manufacturing a photomask by patterning a light shielding film by a dry etching process using as a mask, a resist pattern 3a formed on the light shielding film 2. The light shielding film is formed by using a sputtering target containing chromium and sputtering the target in a mixture gas containing an active gas containing oxygen and/or nitrogen as an atmospheric gas and an inert gas containing helium so as to increase the dry etching rate of the light shielding film, and thereby the dry etching time is reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
