发明名称 SEMICONDUCTOR CHIP AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor chip having improved shock resistance as compared with before. SOLUTION: The semiconductor chip 1 has a nearly rectangular plane shape, and two long sides 11a for forming an active surface 10a and two long sides 11b for forming the back are polished. Even if cracks, cutouts, or the like are formed in four long sides 11a, 11b when cutting out the semiconductor chip 1 from a silicon wafer, the cracks, cutouts, or the like can be removed by polishing in the semiconductor device, thus improving shock resistance as compared with before. Two short sides 12a for forming the active surface 10a and two short sides 12b for forming the back may be polished further. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007180099(A) 申请公布日期 2007.07.12
申请号 JP20050373951 申请日期 2005.12.27
申请人 SEIKO EPSON CORP 发明人 KOBAYASHI TOSHIHIKO
分类号 H01L21/301 主分类号 H01L21/301
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