| 发明名称 |
Method and Apparatus for Programming Nonvolatile Memory |
| 摘要 |
Embodiments of addressing the programming disturb effect are shown. A medium voltage having a magnitude between the programming voltage and ground is applied to a metal bit line among the cells that are subject to the program disturb effect.
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| 申请公布号 |
US2007159887(A1) |
申请公布日期 |
2007.07.12 |
| 申请号 |
US20060532054 |
申请日期 |
2006.09.14 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
SHIH YI TE;HSU JER HAO;WANG YI-TI;LEE HSUEH-YI |
| 分类号 |
G11C16/04;G11C11/34 |
主分类号 |
G11C16/04 |
| 代理机构 |
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