GaN-BASED OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE THE SAME

摘要

A GaN-based optoelectronic device and a method of manufacturing the same are disclosed, GaN-based optoelectronic device comprises substrate (100), low temperature buffer layer (110), N-GaN layer (120), quantum well active layer (130), p-AlGaN limiting layer (140) and P-GaN layer (150). The invention uses the MOVPE growth technology, is especially suitable to manufacture light emitting diode. Using the low temperature buffer layer remarkably improve the performance of device, the yield and the reliability, especially for light emitting diode containing thick and heavily doped N-GaN layer.