SELECTIVITY ETCH OF FILMS WITH HIGH DIELECTRIC CONSTANT WITH H2 ADDITION

摘要

A method for selectively etching a high k layer with respect to a silicon based material is provided. The high k layer is placed into an etch chamber. An etchant gas is provided into the etch chamber, wherein the etchant gas comprises H₂. A plasma is generated from the etchant gas to selectively etch the high k layer with respect to a silicon based material.