发明名称 |
VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS MIT NITRIDZUSAMMENSETZUNG DER GRUPPE III |
摘要 |
A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor player is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110 % of a sputtering voltage. <IMAGE> |
申请公布号 |
DE60121768(T2) |
申请公布日期 |
2007.07.12 |
申请号 |
DE2001621768T |
申请日期 |
2001.04.20 |
申请人 |
TOYODA GOSEI CO. LTD. |
发明人 |
SENDA, MASANOBU;ITO, JUN;CHIYO, TOSHIAKI;SHIBATA, NAOKI;ASAMI, SHIZUYO |
分类号 |
H01L21/203;C23C14/00;C23C14/06;C30B23/02;H01L23/00;H01L33/06;H01L33/12;H01L33/32;H01S5/323;H01S5/343 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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