发明名称 VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS MIT NITRIDZUSAMMENSETZUNG DER GRUPPE III
摘要 A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor player is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110 % of a sputtering voltage. <IMAGE>
申请公布号 DE60121768(T2) 申请公布日期 2007.07.12
申请号 DE2001621768T 申请日期 2001.04.20
申请人 TOYODA GOSEI CO. LTD. 发明人 SENDA, MASANOBU;ITO, JUN;CHIYO, TOSHIAKI;SHIBATA, NAOKI;ASAMI, SHIZUYO
分类号 H01L21/203;C23C14/00;C23C14/06;C30B23/02;H01L23/00;H01L33/06;H01L33/12;H01L33/32;H01S5/323;H01S5/343 主分类号 H01L21/203
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