| 摘要 |
An electrostatic discharge protection device of a multi-finger type GGNMOSFET having a uniform turn-on function is provided to apply current at a low drain voltage by obtaining uniform turn-on characteristics at all fingers. High-density drain regions(42,44) and source regions(41,43) of a second conductive type are arranged in parallel to each other on an upper surface of a semiconductor substrate of a first conductive type. A plurality of gate insulating layers and gate conductive layers are formed on channel regions between the drain regions and the source regions. A plurality of salicide layers are formed partially on the gate conductive layers, the source regions, and the drain regions. The drain regions are connected electrically to first terminals. The gate conductive layers and the source regions are connected electrically to second terminals. A size of the drain region is gradually reduced from a center finger part to an end.
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