| 摘要 |
A photomask may include a patterned layer, a phase-shift layer adjacent the patterned layer, a first aperture, a second aperture, and a light-absorbing layer. The first aperture may allow light to pass through the patterned layer and the phase-shift layer and provide a first phase shift. The second aperture may allow light to pass through the patterned layer and the phase-shift layer and provide a second phase shift different than the first phase-shift. The light-absorbing layer may be disposed adjacent the first aperture and may include a light-absorbing material that reduces the intensity of light passing through the first aperture such that the intensity of light passing through the first aperture is substantially equal to the intensity of light passing through the second aperture.
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