Semiconductor treating device

摘要

A semiconductor treating device ( 1 ) includes treating chamber ( 2 ) connected to a common transportation chamber ( 8 ) and treating a substrate (W) to be treated. A gas supply system ( 40 ) for supplying system ( 40 ) for supplying a predetermined gas to each of the treating chambers ( 2 ) is attached to each chamber. The gas supply system ( 40 ) has a primary side connection unit ( 23 ) connected to the source of the predetermined gas and has a flow rate control unit ( 13 ). The primary side connection unit ( 23 ) connected to the source of the predetermined gas and has a flow rate control unit ( 13 ). The primary side connection unit ( 23 ) is placed on the lower side of the corresponding treating chamber ( 2 ). The flow rate control unit ( 13 ) is placed on a gas line for supplying the gas from the primary side connection unit ( 23 ) to the corresponding treating chamber ( 2 ). The flow rate control unit ( 13 ) is provided such that at least a part of it is superposed on the upper side of the primary side connection unit ( 23 ).