PATTERN FORMING METHOD, PATTERN FORMING APPARATUS, EXPOSURE METHOD, EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD

摘要

A plurality of marks are successively detected within a measuring area separated in a Y axis direction from an exposure area directly under a projection unit (PU), while shifting the detecting area of an alignment system (ALG) in the Y axis direction. Therefore, a shift quantity of a wafer stage in the Y axis direction is reduced compared with conventional cases where the marks are detected by fixing the alignment system and by detecting marks while shifting only wafer stages (WST1, WST2). Since the width of the measuring area in the Y axis direction is reduced, the apparatus is reduced in sizes.