| 摘要 |
<p>A method for exposing an electron beam on a photomask is provided to reduce an electron beam irradiating time by decreasing a substantial thickness of a resist layer exposed by the electron beam using previously an UV(UltraViolet) laser beam on the resist layer. An electron beam is exposed on a resist layer of a photomask substrate(200). A pre-exposure process is performed on the resist layer by using a laser beam before the electron beam irradiating process. The laser beam is generated from UV rays. The pre-exposure process is performed on the entire surface of the photomask substrate.</p> |
