| 摘要 |
<p>Electron beam lithography equipment and a pattern setting method using the same are provided to reduce the time necessary for an electron beam exposure by rotating an electron beam and guiding the electron beam corresponding to the direction of a designed pattern using a rotating unit. Electron beam lithography equipment includes an electron beam column unit, a stage, and a rotating unit. The electron beam column unit(310) is used for irradiating an electron beam. The stage(320) is used for supporting a substrate. The rotating unit(350) is used for rotating the electron beam column unit against the stage, so that the electron beam irradiated from the electron beam column unit is properly guided corresponding to the direction of an aiming pattern.</p> |
