Processing method

摘要

In a processing apparatus which performs a film deposition by alternately supplying a plurality of source gases, the source gases are prevented from reacting within an exhaust pipe so as to prevent the exhaust pipe from clogging due to a reaction by-product. A gas supply to a processing container is switched between a TiCl₄ supply system and a NH₃ supply system. Additionally, a gas exhaust from the processing container is switched between a TiCl₄ exhaust system and a NH₃ exhaust system. The gas exhaust is switched to the TiCl₄ exhaust system when the gas supply is switched to the TiCl₄ supply system, and the gas exhaust is switched to the NH₃ exhaust system when the gas supply is switched to the NH₃ supply system. The switching is performed by a stop valve provided to each of the supply system and the exhaust system.