| 发明名称 |
POWER MOSFETS AND METHODS OF MAKING SAME |
| 摘要 |
A MOSFET comprising an epitaxial layer (100) of a first conductivity type, a body region (800) of a second conductivity type and a source region (820) of the first conductivity type, wherein the gate (694) of said MOSFET comprises a polysilicon etch stop (640) embedded in polysilicon. |
| 申请公布号 |
WO2007036793(A3) |
申请公布日期 |
2007.07.12 |
| 申请号 |
WO2006IB02703 |
申请日期 |
2006.09.29 |
| 申请人 |
ANALOG POWER INTELLECTUAL PROPERTIES LIMITED;SIN, KIN ON JOHNNY;LAI, MAU LAM TOMMY;CHAU, DUC QUANG |
发明人 |
SIN, KIN ON JOHNNY;LAI, MAU LAM TOMMY;CHAU, DUC QUANG |
| 分类号 |
H01L29/78;H01L21/265;H01L21/28;H01L21/336;H01L29/10;H01L29/423 |
主分类号 |
H01L29/78 |
| 代理机构 |
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