发明名称 Verfahren zur Herstellung von aus monomorphen ferroelektrischen Dünnschichten zusammengesetzten Treibern und Sensoren
摘要 A method for forming ferroelectric wafers (10) is provided. A prestress layer (14) is placed on the desired mold. A ferroelectric wafer (12) is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion. <IMAGE>
申请公布号 DE69637114(D1) 申请公布日期 2007.07.12
申请号 DE1996637114 申请日期 1996.04.04
申请人 THE UNITED STATES OF AMERICA, REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION (NASA) 发明人 HELLBAUM, RICHARD F.;BRYANT, ROBERT G.;FOX, ROBERT L.;JALINK, ANTONY JR.;W RORHBACH, WAYNE;SIMPSON, JOYCELYN O.
分类号 B29C41/20;G01L1/16;B29C41/22;B32B1/00;B32B37/14;H01L41/083;H01L41/09;H01L41/22;H01L41/24 主分类号 B29C41/20
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