发明名称 |
DAMAGE-FREE ASHING PROCESS AND SYSTEM FOR POST LOW-K ETCH |
摘要 |
A process is provided for substrate ashing following the etching of features in a low dielectric constant (low-k) layer. The low-k layer can include ultra-low-k material, or a porous low-k material. The process may be configured to remove etch byproducts while preserving feature critical dimension. The ashing process comprises the use of a nitrogen and hydrogen containing chemistry with a passivation chemistry that includes oxygen, such as O<SUB>2</SUB>, CO, or CO<SUB>2</SUB>, or any combination thereof.
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申请公布号 |
WO2007018678(A3) |
申请公布日期 |
2007.07.12 |
申请号 |
WO2006US19914 |
申请日期 |
2006.05.24 |
申请人 |
TOKYO ELECTRON LIMITED;NISHINO, MASARU;TRICKETT, DOUGLAS, M. |
发明人 |
NISHINO, MASARU;TRICKETT, DOUGLAS, M. |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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