| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be manufactured with proper yield and has high reliability, and to provide a manufacturing method therefor. SOLUTION: The manufacturing method of the semiconductor device has a process of forming a first wiring, consisting of a barrier metal 3, a seed film 4, and a wiring material film 5 in a first wiring groove formed on a first interlayer insulating film 1; a process of forming a second interlayer insulating film 7 on the first interlayer insulating film 1, then, forming a via hole 8 and a second wiring groove 9 in the second interlayer insulating film 7, and exposing a wiring material film 5; a process of forming a barrier metal 10a on the semiconductor device; and a process of eliminating the barrier metal 10a on the wiring material film 5 by re-sputtering or the like, and then, forming a barrier metal 21 on the wiring material film 5. This method can eliminate an oxide film 13 in an impurity metal, in the seed film 4 formed on the wiring material film 5 by the re-sputtering or the like. COPYRIGHT: (C)2007,JPO&INPIT |
