| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor device that has a low ON-state voltage and a low reverse bias leak current, and is capable of diode operation. SOLUTION: The nitride-based semiconductor device comprises a carrier run layer 1 comprised of Al<SB>X</SB>Ga<SB>1-X</SB>N(0≤X<1), a barrier layer 2 comprised of Al<SB>Y</SB>Ga<SB>1-Y</SB>N(0<Y≤1, X<Y), an anode electrode 3 formed on the barrier layer 2, a cathode electrode 4 formed on the barrier layer 2 with a spacing to encircle the anode electrode 3, and a dielectric 5 to cover the barrier layer 2 from under the periphery of the anode electrode 3 to the position where the cathode electrode 4 is formed. A recess structure 7 is formed in the vicinity of the periphery of the anode electrode 3 in the barrier layer 2 to remove part of the barrier layer 2, and the anode electrode 3 is formed to cover the barrier layer 2 encircled by the recess structure 7 and at least part of the dielectric 5 formed on the recess structure 7. COPYRIGHT: (C)2007,JPO&INPIT |
