| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing compound in which reliable embedded pattern of a metal film can be formed efficiently by fully decreasing etching rate while maintaining high CMP speed, and to provide a polishing method therefor. SOLUTION: This invention provides the polishing compound for CMP comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water; and a polishing method using this polishing compound. Also, it is preferable that the water-soluble polymer has a weight-average molecular weight of 500 or more and the polishing compound has a coefficient of kinetic friction of 0.25 or more, a Ubbelode's viscosity of from 0.95 cP to 1.5 cP and a point-of-inflection pressure of 50 gf/cm<SP>2</SP>. COPYRIGHT: (C)2007,JPO&INPIT
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