| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of obtaining a high processing capability. SOLUTION: The substrate processing apparatus 140 includes: an ozone processing chamber 15 for housing a substrate W and for processing the substrate W inside; a heater 20 for heating the substrate W housed in the ozone processing chamber 15; a vapor supplying means 75 for supplying vapor into the ozone processing chamber 15; an ozone gas supplying means 7 for supplying ozone gas into the ozone processing chamber 15; a rinse processing chamber 93 for rinse washing the substrate W after processing in the ozone processing chamber 15; and a wafer guide 128 for moving the substrate between the ozone processing chamber 15 and the rinse processing chamber 93. COPYRIGHT: (C)2007,JPO&INPIT
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