发明名称 MANUFACTURING METHOD OF THIN LAYER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film device such as a superconducting element or the like which is excellent in mechanical strength and useful for submillimeter wave band reception. SOLUTION: The manufacturing method comprises the steps of: forming a multilayer structure object consisting of NbN/MgO/NbN-SIS bonding on an MgO temporary substrate; forming SiO<SB>2</SB>on the multilayer structure object as a substrate; and forming the thin film device by removing the MgO temporary substrate by etching. The superconducting element (the thin film device) manufactured by the present method is easy to introduce to a wave guide for submillimeter because of excellent performance and high mechanical strength. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007180492(A) 申请公布日期 2007.07.12
申请号 JP20060248935 申请日期 2006.09.14
申请人 NATIONAL INSTITUTE OF INFORMATION & COMMUNICATIONTECHNOLOGY 发明人 KAWAKAMI AKIRA
分类号 H01L39/24;H01P3/08 主分类号 H01L39/24
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