| 摘要 |
Provided is a method for manufacturing a semiconductor device. The method includes: sequentially depositing a buried oxide layer, an insulating layer, a pad oxide layer and a pad nitride layer on a silicon substrate; etching a predetermined region of the silicon substrate using a photoresist pattern as an etch mask to form a trench; implanting an impurity ion into the trench; gap-filling the impurity ion-implanted trench with an insulating material; planarizing the insulating material filled in the gap until the pad nitride layer is exposed; and removing the pad oxide layer and the pad nitride layer.
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