发明名称 Radiation-sensitive resin composition, process for producing the same and process for producing semiconductor device therewith
摘要 A chemically amplified radiation sensitive resin composition comprising at least (1) a base resin that is an alkali-soluble resin or an alkali-insoluble or slightly alkali-soluble resin protected by an acid dissociable protecting group wherein the amount of an ultrahigh molecular weight component whose weight average molecular weight determined by polystyrene standards as measured by gel permeation chromatography with multi angle laser light scattering method is one million or more is 1 ppm or less, (2) a photo-acid generator capable of generating an acid by irradiation of radiation, and (3) a solvent. This radiation sensitive resin composition is applied onto an object to be processed 2 to form a photoresist film 3 . The photoresist film is exposed and then developed to form a fine resist pattern 4 with 0.2 mum or less in pattern width. Thereafter, dry etching is conducted to form a gate electrode, hole shape patterning or grooved shape patterning of a semiconductor device. In this manner, patterning with minimized occurrence of pattern defects such as microbridge can be realized.
申请公布号 US2007160927(A1) 申请公布日期 2007.07.12
申请号 US20040544902 申请日期 2004.02.05
申请人 MURAKAMI KENICHI;SASSA SUGURU;YOSHIKAWA KATSUHIRO;NISHIKAWA MASATO;KIMURA KEN;KINOSHITA YOSHIAKI 发明人 MURAKAMI KENICHI;SASSA SUGURU;YOSHIKAWA KATSUHIRO;NISHIKAWA MASATO;KIMURA KEN;KINOSHITA YOSHIAKI
分类号 G03C1/00;G03F7/039;C08L101/00;G03F7/004;G03F7/038;H01L21/027 主分类号 G03C1/00
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