SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

A semiconductor device capable of increasing a strain quantity given by a stress provided film and increasing a drive force in a MOS transistor having an elevated region; and a method of fabricating the semiconductor device. An element isolation region (102), a gate insulation film (103), a gate electrode (104), an extension (105) and a side-wall insulation film (106) are formed on a silicon substrate. Then, an elevated region (107) is formed to form a source/drain (108) and a silicide layer (109). Next, the side-wall insulation film (106) is etched to leave the interval between it and the elevated region (107), and a stress provided film (110) is buried individually.