| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an improved attenuated phase shift mask, a method of manufacturing such an attenuated phase shift mask and a method for using such an attenuated phase shift mask. <P>SOLUTION: The present invention relates to an attenuated phase shift mask suitable for hyper NA lithographic processing of a device, to a method for making such a mask and to hyper NA lithographic processing using such a mask. The attenuated phase shift mask is made taking into consideration the effect of the numerical aperture of the lithographic system. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
