| 摘要 |
A semiconductor storage device of the present invention has a configuration in which a plurality of memory cells respectively including a transistor connected to a storage element for accumulating data are used, a bit line and a word line for specifying one of a plurality of memory cells are used. A structure in which a source electrode and a drain electrode hold an active region is formed vertically to a substrate face. The same bit line is connected to the first two-memory cell unit adjacently formed in a predetermined direction. The same word line is formed, which is a gate electrode of the transistors of the second two-memory cell unit which includes one memory cell of the first two-memory cell unit and which is adjacently formed in the predetermined direction.
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