| 摘要 |
A trapping position 30 is defined on a substrate 1 , and an electrode pattern 2 is formed on the substrate 1 , having a first pair of electrodes 21 including electrodes 22 and 23 formed at positions opposite each other with the trapping position 30 placed therebetween along a diagonal x-axis, and a second pair of electrodes 26 including electrodes 27 and 28 formed at positions opposite each other with the trapping position 30 placed therebetween along a y-axis orthogonal to the x-axis. The atomic device alternately switches between a first state and a second state to trap a neutral atom at the trapping position 30; in the first state, the electrode 22 of the first pair of electrodes 21 is set at a positive potential +V<SUB>0 </SUB>with respect to a reference potential and the electrode 23 is set at a negative potential -V<SUB>0</SUB>, and in the second state, the electrode 27 of the second pair of electrodes 26 is set at the positive potential +V<SUB>0 </SUB>and the electrode 28 is set at the negative potential -V<SUB>0</SUB>. This allows for realizing an atomic device which can facilitate integration of atomic circuits and reduce disturbances or the like.
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