发明名称 Integrated capacitors in package-level structures, processes of making same, and systems containing same
摘要 An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
申请公布号 US2007158818(A1) 申请公布日期 2007.07.12
申请号 US20050323312 申请日期 2005.12.30
申请人 TANG JOHN J;ZENG XIANG Y;HE JIANGQI;HAI DING 发明人 TANG JOHN J.;ZENG XIANG Y.;HE JIANGQI;HAI DING
分类号 H01L23/52 主分类号 H01L23/52
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