发明名称 MULTI-LEVEL MEMORY CELL SENSING
摘要 A multi-level cell memory device performs a read by providing a stepped voltage waveform on a wordline, and comparing cell currents to a substantially constant reference current. Prior to the application of the stepped voltage waveform, the wordline may share charge with another circuit node.
申请公布号 WO2007078885(A2) 申请公布日期 2007.07.12
申请号 WO2006US48043 申请日期 2006.12.14
申请人 INTEL CORPORATION;TEDROW, KERRY, D.;NGUYEN, DUNG;LI, BO;HAQUE, REZAUL;RAHMAN, AHSANUR;MONASA, SAAD, P.;GOLDMAN, MATTHEW 发明人 TEDROW, KERRY, D.;NGUYEN, DUNG;LI, BO;HAQUE, REZAUL;RAHMAN, AHSANUR;MONASA, SAAD, P.;GOLDMAN, MATTHEW
分类号 G11C11/56;G11C16/08 主分类号 G11C11/56
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