发明名称 METHOD FOR MANUFACTURING CAPACITOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacitor having a dielectric layer having a high dielectric constant, and preventing leakage current from deteriorating by a large amount. <P>SOLUTION: The capacitor manufacturing method comprises an application process for forming an application film, by applying a dielectric precursor solution containing titanium, barium, strontium, and a group IA element to the surface of a base material; and a heat treatment process for performing heat treatment on the application film at 700 to 900&deg;C to obtain a high dielectric film. The high dielectric film contains the group IA element of 1.5 to 5 pts.wt. with respect to the dielectric substance of 100 pts.wt. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007180398(A) 申请公布日期 2007.07.12
申请号 JP20050379155 申请日期 2005.12.28
申请人 TDK CORP 发明人 AIZAWA HIDESATO;SAIDA HITOSHI;MIYAMOTO YUKI
分类号 H01G4/12;H01G4/33;H01G13/00;H01L21/316;H01L21/822;H01L21/8242;H01L27/04;H01L27/108 主分类号 H01G4/12
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