| 发明名称 |
METHOD OF FABRICATING A TRENCH ISOLATION LAYER IN A SEMICONDUCTOR DEVICE |
| 摘要 |
A method of fabricating a trench isolation layer in a semiconductor device. A method of fabricating a trench isolation layer in a semiconductor device, which may remove particles (e.g. in the form of an oxide layer) that are formed during a moat wet etch process.
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| 申请公布号 |
US2007161253(A1) |
申请公布日期 |
2007.07.12 |
| 申请号 |
US20060617383 |
申请日期 |
2006.12.28 |
| 申请人 |
JANG SEUNG S;CHOI YONG K |
发明人 |
JANG SEUNG S.;CHOI YONG K. |
| 分类号 |
H01L21/311;C23F1/00;H01L21/302;H01L21/306;H01L21/461 |
主分类号 |
H01L21/311 |
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