发明名称 Internal voltage generation apparatus for semiconductor device
摘要 An internal voltage generation apparatus for a semiconductor device is disclosed. The internal voltage generation apparatus includes a power-up detector for receiving an external supply voltage and generating a power-up signal, an internal voltage generator for generating a plurality of internal voltages, and an initial level holder including a plurality of transistors for supplying the external supply voltage to the internal voltage generator in response to the power-up signal, and a plurality of passive elements connected in parallel with the transistors, respectively.
申请公布号 US2007159232(A1) 申请公布日期 2007.07.12
申请号 US20060647733 申请日期 2006.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM SAENG HWAN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
主权项
地址