| 摘要 |
PROBLEM TO BE SOLVED: To prevent formation of cracks in an insulator embedded in a trench, and to fill a location that is to be filled with the insulator. SOLUTION: A manufacturing method for a semiconductor device contains a process for forming the trench 1a that is embedded at the specified place of the first silicon board 1 of an SOI board 10 and reaching an insulating film 3, and the process for forming a first BPSG film 6 on the first silicon board 1, comprising the trench 1a, so as not to completely embed the inside of the trench 1a. The manufacturing method further contains the process for forming an NSG film 7 on the first BPSG film 6, and the process for forming a second BPSG film 8 on the NSG film 7. Each film-formation process is conducted in the same CVD oven by a CVD method, and each film-formation process is changed over, by switching the sequence of gas kinds supplied to the CVD oven. COPYRIGHT: (C)2007,JPO&INPIT
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