发明名称 |
High-speed low-voltage programming and self-convergent high-speed low-voltage erasing schemes for EEPROM |
摘要 |
The present invention provides a high-speed low-voltage programming scheme and self-convergent high-speed low-voltage erasing schemes for Electrically Erasable Programmable Read-Only Memories (EEPROM). For the N-type Field Effect Transistor (NFET) based NVM programming, an elevated source voltage to the substrate can achieve high efficient Drain-Avalanche-Hot-Electron Injection (DAHEI) into the floating gate resulting in high-speed and low-voltage operations. The self-convergent and low-voltage erasing can be achieved by applying Drain-Avalanche-Hot Hole Injection (DAHHI) with the conditions of restricted maximum drain current and a moderate control gate voltage enough to turn on the NFET. For the p-type FET (PFET) based EEPROM programming, a negative source voltage relative to the substrate can achieve high efficient Drain-Avalanche-Hot-Hole Injection (DAHHI) into the floating gate resulting in high-speed and low voltage operations. The self-convergent and low voltage erasing can be achieved by applying Drain-Avalanche-Hot-Electron Injection (DAHEI) with the conditions of restricted maximum magnitude of drain current and a negative moderate control gate voltage enough to turn on the PFET.
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申请公布号 |
US2007158733(A1) |
申请公布日期 |
2007.07.12 |
申请号 |
US20060327436 |
申请日期 |
2006.01.09 |
申请人 |
YIELD MICROELECTRONICS CORP. |
发明人 |
HUANG DANIEL;WANG LEE;LIN HSIN C.;CHANG ROGET |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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地址 |
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