| 摘要 |
An SRAM device including first and second access transistor composed of an N channel MOS transistor, first and second drive transistors composed of the N channel MOS transistor, and first and second P channel thin film transistor functioning as a pull-up device, comprises: a well formed by implanting a dopant of a conductivity an opposite to that of a semiconductor substrate in the semiconductor substrate; a first active region in which a drain of the first access transistor and a drain of the first drive transistor are formed; a second active region in which a drain of the second access transistor and a drain of the second drive transistor are formed; and a groove line for isolating the first active region and the second active region from each other, wherein the first access transistor, the first drive transistor, the first thin film transistor are formed in point-symmetrical relation with the second access transistor, the second drive transistor, and the second thin film transistor based on a center of the groove line.
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