| 摘要 |
The present invention is generally directed to various methods of forming conductive through-wafer vias. In one illustrative embodiment, the method comprises providing a layer of semiconducting material, forming a layer of metal on a first side of the layer of semiconducting material, forming an opening in the layer of semiconducting material to thereby expose a portion of the layer of metal, the opening extending from at least a second side of the layer of semiconducting material to the layer of metal, and performing a deposition process to form a conductive contact in the opening using the exposed portion of the metal layer as a seed layer. In another illustrative embodiment, the method comprises providing a layer of semiconducting material, forming a first layer of insulating material on a first side of the layer of semiconducting material, forming a layer of metal on the first layer of insulating material, forming an opening in the layer of semiconducting material and the first layer of insulating material to thereby expose a portion of the layer of metal, the opening extending from at least a second side of the layer of semiconducting material to the layer of metal, and performing a deposition process to form a conductive contact in at least the opening using the exposed portion of the metal layer as a seed layer.
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