发明名称 SUBSTRATE SUPPORT FOR INCREASING SUBSTRATE TEMPERATURE IN PLASMA REACTORS
摘要 A substrate processing system is provided. A housing (304) defines a processing chamber. A plasma (308) -generating system is operatively coupled to the processing chamber. A substrate support member (312) is disposed within the processing chamber and configured to hold a substrate (316) during substrate processing. A ceramic insert (320) is disposed over the substrate support member such that the ceramic insert is disposed between the substrate support member and the substrate during substrate processing. A gas-delivery system is configured to introduce gases into the processing chamber. A controller controls the plasma-generating system and the gas-delivery system.
申请公布号 WO2007021520(A3) 申请公布日期 2007.07.12
申请号 WO2006US29753 申请日期 2006.07.28
申请人 APPLIED MATERIALS, INC.;LI, SHIJIAN;LU, SIQING;CHOU, IRENE;LEE, YOUNG, S.;ISHIKAWA, TETSUYA 发明人 LI, SHIJIAN;LU, SIQING;CHOU, IRENE;LEE, YOUNG, S.;ISHIKAWA, TETSUYA
分类号 H01J37/32;C23C14/50;C23C16/458;H01L21/02;H01L21/683 主分类号 H01J37/32
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