| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for vapor depositing an O<SB>3</SB>-TEOS (Tetraethylorthosilicate) oxide film, and a vapor deposition apparatus for vapor depositing a prescribed substance film containing an O<SB>3</SB>-TEOS oxide film. SOLUTION: The method for vapor depositing the O<SB>3</SB>-TEOS oxide film includes a step of vapor depositing a first O<SB>3</SB>-TEOS oxide film 321 on a lower film 315, which has lower film nature dependency, under a high temperature at which the lower film nature dependency is eliminated, and a step of vapor depositing a second O<SB>3</SB>-TEOS oxide film 323 on the first O<SB>3</SB>-TEOS oxide film 321 under a low temperature at which a vapor deposition rate is high. Vapor depositing the O<SB>3</SB>-TEOS oxide films 321 and 323 under temperature conditions of a high temperature and a low temperature at two steps, therefore, provides the O<SB>3</SB>-TEOS that is rid of the lower film nature dependency to not to lower productivity. When a single apparatus is provided with two or more susceptors or heaters, a prescribed substance film can be vapor deposited at different temperatures in the single apparatus. COPYRIGHT: (C)2007,JPO&INPIT
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