| 摘要 |
PROBLEM TO BE SOLVED: To increase the unit area of a photodiode in an image sensor while maintaining an integration degree to enhance the sensitivity thereof. SOLUTION: The CMOS image sensor includes: a semiconductor substrate on which an active region and a component isolation region are formed; a photodiode region and a transistor region formed on the active region; a plurality of semiconductor patterns formed on the photodiode region; a transistor formed on the transistor region; a first conductive-type first diffusion region formed on the photodiode region; a first-conductive-type second diffusion region formed on the transistor region; and a second conductive-type third diffusion region formed on the first diffusion region. COPYRIGHT: (C)2007,JPO&INPIT
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