| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which occurrence of crystal defects in the substrate is prevented by reducing the influence of the temperature difference between an SOI region or SON (Silicon-On-Nothing) region and silicon regions on the substrate caused by the heat absorption efficiency difference therebetween even if the substrate is rapidly heated and rapidly cooled. SOLUTION: A silicon region 23B is formed on the semiconductor substrate, and surrounding the silicon region 23B, an SOI region 22 is formed on the semiconductor substrate via either an insulating film or an empty cavity. Furthermore, a silicon region 23A is formed surrounding the SOI region 22 on the semiconductor substrate. COPYRIGHT: (C)2007,JPO&INPIT
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