| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor which has a good voltage resistance characteristic and is equipped with a gate insulating layer which can be formed in a liquid-phase process without high temperature treatment, a reliable electronic circuit, a display unit and an electronic apparatus. SOLUTION: This thin-film transistor 1 is a top-gate thin-film transistor to be mounted on a substrate 10 and is structured in a way that a source electrode 20a and a drain electrode 20b are provided separately, an organic semiconductor layer 30 is provided between the source electrode 20a and the drain electrode 20b, and a gate insulating layer 40 is provided between the organic semiconductor layer 30 and a gate electrode 50. To form the gate insulating layer 40, a composite particle 41 made by adding a hydrophobic compound to the surface of an insulating inorganic particle is scattered in a matrix 42 composed of insulating polymer. COPYRIGHT: (C)2007,JPO&INPIT
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