| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element having a low on resistance and high voltage resistance. SOLUTION: Concentration of field to ends of a gate electrode 5 is controlled to realize high voltage resistance by providing a floating electrode 6 floated in potential between a gate electrode 5 and a drain electrode 4 of HFET. Accordingly, impurity doping concentration to an n-AlGaN barrier layer 2 is set high to realize low on-resistance. COPYRIGHT: (C)2007,JPO&INPIT
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