| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method productively manufacturing a silicon single crystal while eliminating the formation of a tail portion. SOLUTION: The pulling of the silicon single crystal S is substantially stopped without extremely changing the thermal history of the silicon single crystal S by raising a crucible 4 filled with a raw material melt liquid M at the same speed as that of the pulling speed of the silicon single crystal S after growing a straight barrel portion S1 of the silicon single crystal S. The silicon single crystal S is separated from the raw material melt liquid M in the state of nontransition in a state where a shape of a growing face of the silicon single crystal S is a protruded shape facing downward by separating the silicon single crystal S from the raw material melt liquid M. As a result, the silicon single crystal wherein the formation of the tail portion is eliminated can be carried out by reproductively performing the nontransition separation of the silicon single crystal S from the raw material melt liquid M. COPYRIGHT: (C)2007,JPO&INPIT
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