发明名称 Forming ultra dense 3-D interconnect structures
摘要 Methods of forming a microelectronic structure are described. Embodiments of those methods include bonding at least one bond pad of a device side of a first substrate to at least one bond pad of a device side of a second substrate, forming at least one via to connect to at least one of an active feature and an interconnect structure disposed within the first substrate, and forming a reactive material on a surface of at least one of the active features.
申请公布号 US2007161150(A1) 申请公布日期 2007.07.12
申请号 US20050322058 申请日期 2005.12.28
申请人 INTEL CORPORATION 发明人 MORROW PATRICK R.
分类号 H01L21/00 主分类号 H01L21/00
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