| 摘要 |
A pattern CD(Critical Dimension) measuring method and equipment are provided to enhance exactness and reproducibility in a pattern CD measuring process and to improve exactness of a CD measurement on a hole pattern and a curved pattern. Charged particles are scanned on a surface of a sample(100) with a predetermined pattern. A predetermined graph of intensity of emitted charged particles in contrast with a scanning distance is obtained by collecting the emitted charged particles. An image processing is performed by filtering a noise portion of the intensity graph. The CD of the predetermined pattern is measured by measuring the distance between peaks of the graph.
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