SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To adjust threshold voltage of transistors of the same conductivity in a semiconductor device using an FUSI (Fully Silicided) gate electrode as a gate electrode. SOLUTION: A semiconductor device comprises: a first transistor 115A(or 115B) of a first conductivity having a first gate electrode 115a(or 115b) of a metallic silicide film formed on a substrate 100 with a first gate insulating film 103A disposed therebetween, and a second transistor 116A(or 116B) of the first conductivity having a second gate electrode 116a(or 116b) of a metallic silicide film formed on the substrate 100 with a second gate insulating film 103A disposed therebetween. The first and second gate electrodes 115a(or 115b) and 116a(or 116b) have mutually different silicide composition ratios. COPYRIGHT: (C)2007,JPO&INPIT